 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WT6920AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free D1 1 3 8 DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 40 VOLTAGE S1 G1 D1 7 2 D2 6 S2 Features: *Super high dense cell design for low RDS(ON) RDS(ON)<35m@VGS = 10V RDS(ON)<62m@VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package D2 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) (TA =25 C) (TA =70 C) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) (TA =25 C) (TA =70 C) Maximax Junction-to-Ambient (1) Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg G2 4 5 1 SO-8 Value 40 Unite V V A A A W C/W C + - 20 5 4.2 20 1.7 2 1.44 62.5 -55 to 150 Operating Junction and Storage Temperature Range Device Marking WT6920AM=STM6920A http://www.weitron.com.tw WEITRON 1/6 02-Aug-05 WT6920AM Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.8 - Max 3 + -100 1 35 62 Unit V V nA uA Drain-Source Breakdown Voltage VGS=0V, ID=250A Gate-Source Threshold Voltage VDS=VGS, ID=250A Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=32V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=5A On-State Drain Current VDS=5V, VGS=10V Forward Transconductance VDS=5V, ID=6A 40 1 - 15 rDS (on) 24 45 m ID(on) gfs 10 - A S - Dynamic (3) Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss - 759 92 70 PF Switching (3) Turn-On Delay Time VGS =10V,VDD =20V, ID=1A, RGEN=3.3 Rise Time VGS =10V,VDD =20V, ID=1A, RGEN=3.3 Turn-Off Time VGS =10V,VDD =20V, ID=1A, RGEN=3.3 Fall Time VGS =10V,VDD =20V, ID=1A, RGEN=3.3 Total Gate Charge VDS=20V, ID=6A,VGS =10V VDS=20V, ID=6A,V GS =4.5V Gate-Source Charge VDS=20V, VGS=10V, ID=6A Gate-Drain Charge VDS=20V, VGS=10V, ID=6A Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A td(on) tr td(off ) tf Qg - 9.2 21 15.5 4.4 - nS - nc 15.9 7.6 2.2 4.8 0.8 Qgs Qgd 1.2 VSD V Note: 1. Surface Mounted on FR4 Board t < 10sec. _ _ _ 2. Pulse Test : PW < 300us, Duty Cycle < 2%. 3. Guaranteed by Design, not Subject to Production Testing. http://www.weitron.com.tw WEITRON 2/6 02-Aug-05 WT6920AM 20 VGS=10,8,5V W E IT R O N 25 20 ID, Drain Current(A) 12 8 4 0 VGS=4V ID, Drain Current (A) 16 15 10 Tj=125 C 5 25 C 0 0 1 2 3 4 -55 C 5 6 VGS=3V 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) Fig.1 Output Characteristics 1500 Fig.2 Transfer Characteristics 2.2 1.8 VGS=10V ID=6A VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 900 600 300 0 Crss Ciss RDS(ON), On-Resistance ( Normalized ) 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 Coss 0 5 10 15 20 25 30 Tj( C) Figure 3. Capacitance VDS, Drain-to Source Voltage (V) Fig.4 On-Resistance Variation with Temperature 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 VDS=VGS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250uA 75 100 125 0 25 50 75 100 125 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Fig.5 Gate Threshold Variation with Temperature Fig.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 02-Aug-05 WT6920AM IS ,SOURCE-DRAIN CURRENT(A) W E IT R O N ,TRANSCONDUCTANCE(S) 18 15 12 9 6 3 0 VDS=5V 0 5 10 15 20 25 20 10 FS 1 0 0.4 0.6 0.8 1.0 TJ=25C 1.2 1.4 g I DS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current FIG.8 Body Diode Forward Voltage Variation with Source Current VGS ,GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 0 ID , DRAIN CURRENT(A) VDS=20V ID=6A 50 10 (O L N) im it 10 10 RD S ms 1 DC 1s 0m s 0.1 0.03 VGS=10V Single Pulse Tc=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge V DD FIG.10 Maximum Safe Operating Area ton toff tr 90% V IN D VG S R GE N G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 02-Aug-05 WT6920AM 10 W E IT R O N No rmalized Transi en t The rmal Resi st ance 1 0.5 0.2 0.1 PDM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = PDM* RJA (t) 4. Duty Cycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 02-Aug-05 WT6920AM SO-8 Package Outline Dimensions Unit:mm 1 L E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 http://www.weitron.com.tw WEITRON 6/6 02-Aug-05 |
Price & Availability of WT6920AM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |